SMG2317P -0.9 a, -30 v, r ds(on) 300 m ? p-channel enhancement mode mosfet elektronische bauelemente 05-jan-2011 rev. a page 1 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen and lead-free description these miniature surface mo unt mosfets utilize a high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life. ? low gate charge ? fast switch. ? miniature sc-59 surface mount package saves board space. package information package mpq leadersize sc-59 3k 7? inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v continuous drain current 1 i d @ t a =25 c i d -0.9 a i d @ t a =70 c -0.75 a pulsed drain current 2 i dm -10 a continuous source current (diode conduction) 1 i s 0.4 a power dissipation 1 p d @ t a =25 c p d 0.5 w p d @ t a =70 c 0.42 w operating junction and st orage temperature range tj, tstg -55 ~ 150 c thermal resistance data maximum junction to ambient 1 t Q 5 sec r ? ja 250 c / w steady state 285 notes: 1 surface mounted on 1? x 1? fr4 board. 2 pulse width limited by maximum junction temperature. top view a l c b d g h j f k e 1 2 3 1 2 3 sc-59 ref. millimete r ref. millimete r min. max. min. max. a 2.70 3.10 g 0.10 ref. b 2.25 3.00 h 0.40 ref. c 1.30 1.70 j 0.10 0.20 d 1.00 1.40 k 0.45 0.55 e 1.70 2.30 l 0.85 1.15 f 0.35 0.50 1 2 3
SMG2317P -0.9 a, -30 v, r ds(on) 300 m ? p-channel enhancement mode mosfet elektronische bauelemente 05-jan-2011 rev. a page 2 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions switch off characteristics drain-source breakdown voltage v (br)dss -30 - - v v ds = 0v, i d = -250ua gate-body leakage i gss - - 100 na v ds = 0v, v gs = 20v zero gate voltage drain current i dss - - -1 a v ds = -24v, v gs = 0v - - -10 v ds = -24v, v gs = 0v, t j = 55 c switch on characteristics gate-threshold voltage v gs(th) -0.8 -1.7 -2.6 v v ds =v gs , i d = -250ua on-state drain current 1 i d(on) -2 - - a v ds = -5v, v gs = -4.5v drain-source on-resistance 1 r ds(on) - 250 300 m ? v gs = -10v, i d = -1a - 530 660 v gs = -4.5v, i d = -0.9a,t j = 55 c - 450 500 v gs = -4.5v, i d = -0.9a forward transconductance 1 g fs - 2 - s v ds = -5v, i d = -1.1a diode forward voltage v sd - -0.7 -1.2 v i s = -0.4a, v gs = 0v dynamic 2 total gate charge q g - 2 3 nc v ds = -10v, v gs = -5v, i d = -0.9a gate-source charge q gs - 0.5 - gate-drain charge q gd - 1.1 - switching turn-on delay time t d(on) - 8 16 ns v ds = -10v, v gen = -10v, r g = 50 ? , i d = -0.9a rise time t r - 16 32 turn-off delay time t d(off) - 36 93 fall time t f - 33 94 notes: 1 pulse test pw Q 300 us duty cycle Q 2%. 2 guaranteed by design, not s ubject to production testing.
SMG2317P -0.9 a, -30 v, r ds(on) 300 m ? p-channel enhancement mode mosfet elektronische bauelemente 05-jan-2011 rev. a page 3 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curve
SMG2317P -0.9 a, -30 v, r ds(on) 300 m ? p-channel enhancement mode mosfet elektronische bauelemente 05-jan-2011 rev. a page 4 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curve
SMG2317P -0.9 a, -30 v, r ds(on) 300 m ? p-channel enhancement mode mosfet elektronische bauelemente 05-jan-2011 rev. a page 5 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curve
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